专利名称：Large-scale fabrication of vertically aligned
ZnO nanowire arrays
发明人：Zhong L. Wang,Suman Das,Sheng Xu,Dajun
Yuan,Rui Guo,Yaguang Wei,Wenzhuo Wu
申请号：US13091855申请日：20110421公开号：US08367462B2公开日：20130205
专利附图：
摘要：In a method for growing a nanowire array, a photoresist layer is placed onto ananowire growth layer configured for growing nanowires therefrom. The photoresist
layer is exposed to a coherent light interference pattern that includes periodicallyalternately spaced dark bands and light bands along a first orientation. The photoresistlayer exposed to the coherent light interference pattern along a second orientation,transverse to the first orientation. The photoresist layer developed so as to removephotoresist from areas corresponding to areas of intersection of the dark bands of theinterference pattern along the first orientation and the dark bands of the interferencepattern along the second orientation, thereby leaving an ordered array of holes passingthrough the photoresist layer. The photoresist layer and the nanowire growth layer areplaced into a nanowire growth environment, thereby growing nanowires from thenanowire growth layer through the array of holes.
申请人：Zhong L. Wang,Suman Das,Sheng Xu,Dajun Yuan,Rui Guo,YaguangWei,Wenzhuo Wu
地址：Marietta GA US,Atlanta GA US,Atlanta GA US,Atlanta GA US,Atlanta GAUS,Atlanta GA US,Atlanta GA US
国籍：US,US,US,US,US,US,US
代理机构：Bockhop & Associates, LLC
代理人：Bryan W. Bockhop
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容